深圳大时代电子有限公司
CSD85312Q3E
- 型号
- CSD85312Q3E
- 制造商
- Texas Instruments
- 描述
- MOSFET 2N-CH 20V 39A 8VSON
- 数据表
-
CSD85312Q3E.pdf
- 所属分类
- 家庭
- Transistors - FETs, MOSFETs - Arrays
- 系列
- NexFET™
支付方式
送货服务
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规格
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-VSON (3.3x3.3) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- 发送邮件
- ldx1688@szdsddz.com or 在线查询
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